Flexible memristors fabricated through sol-gel hydrolysis

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 111-120

  Tedesco, J L ^a   Gergel Hackett, N ^a   Stephey, L ^a   Herzing, A A ^a   Hernandez Mora, M ^a   Kopanski, J J ^a   Hacker, C A ^a   Richter, C A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; CONDUCTANCE-FREQUENCY; CURRENT VOLTAGE; DIFFERENT STRUCTURE; ELECTRON ENERGY LOSS; I-V MEASUREMENTS; LOCALIZED CONDUCTION; LOSS MECHANISMS; ORGANIC MATERIALS; STRUCTURAL DIFFERENCES; SWITCHING BEHAVIORS; TIO;

AMORPHOUS FILMS; CHARACTERIZATION; ELECTRIC FIELDS; ELECTRIC WIRE; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; GELS; GRAPHENE; HYDROLYSIS; INFRARED IMAGING; MEMRISTORS; NANOWIRES; OXIDE FILMS; PASSIVE FILTERS; PHOTOELECTRON SPECTROSCOPY; POLYETHYLENE TEREPHTHALATES; SOL-GEL PROCESS; SOL-GELS; SOLS; SPECTROSCOPIC ELLIPSOMETRY; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

RESISTORS;

EID: 79960781600     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3569904     Document Type: Conference Paper

References (35)

1. L.O. Chua, IEEE Trans. Circ. Theory, 18, 507 (1971).
2. L.O. Chua and S.M. Kang, Proc. IEEE, 64, 209 (1976).
3. D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams, Nature, 438, 80 (2008).
4. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, and R.S. Williams, Nature Nanotech., 3, 429 (2008).
5. R.S. Williams, IEEE Spectr., 45(12), 29, (2008).
6. D.B. Strukov, J.L. Borghetti, and R.S. Williams, Small, 5, 1058 (2009).
7. M.D. Pickett, D.B. Strukov, J.L. Borghetti, J.J. Yang, G.S. Snider, D.R. Stewart, and R.S. Williams, J. Appl. Phys., 106, 074508 (2009).
8. J. Borghetti, D.B. Strukov, M.D. Pickett, J.J. Yang, D.R. Stewart, and R.S. Williams, J. Appl. Phys., 106, 124504 (2009).
9. J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L.D. Kilcoyne, G. Medeiros-Ribeiro, and R.S. Williams, Adv. Mater., 22, 3573 (2010).
10. F. Argali, Solid-State Electron., 11, 535 (1968).
11. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys., 98, 033715 (2005).
12. D.S. Jeong, H. Schroeder, and R. Waser, Appl. Phys. Lett., 89, 082909 (2006).
13. D.S. Jeong, H. Shroeder, and R. Waser, Electrochem. Solid-State Lett., 10, G51 (2007).
14. L.-E. Yu, S. Kim, M.-K. Ryu, S.-Y. Choi, and Y.-K. Choi, IEEE Electron Device Lett., 29, 331 (2008).
15. R. Waser, R. Dittman, G. Staikov, and K. Szot, Adv. Mater., 21, 2632 (2009).
16. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, and J.W. Kim, Appl. Phys. Lett., 95, 162108 (2009).
17. H.Y. Jeong, J.Y. Lee, M.-K. Ryu, and S.-Y. Choi, Phys. Status Solidi RRL, 4, 28 (2010).
18. S. Kim, O. Yarimaga, S. Choi, and Y. Choi, Solid-State Electron., 54, 392 (2010).
19. H.Y. Jeong, Y.I. Kim, J.Y. Lee, and S.-Y. Choi, Nanotechnology, 21, 115203 (2010).
20. M.H. Lee, K.M. Kim, G.H. Kim, J.Y. Seok, S.J. Song, J.H. Yoon, and C.S. Hwang, Appl. Phys. Lett., 96, 152909 (2010).
21. H.Y. Jeong , J.Y. Lee , and S.-Y. Choi, Adv. Funct. Mater., 20, 3912 (2010).
22. R.S. Williams, IETE Tech. Rev. 27, 181 (2010).
23. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, and D. Gundlach, IEEE Electron Device Lett., 30, 706 (2009).
24. S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumdar, and W. Lu, Nano Lett., 10, 1297 (2010).
25. Q. Xia, W. Robinett, M.W. Cumbie, N. Banerjee, T.J. Cardinali, J.J. Yang, W. Wu, X. Li, W.M. Tong, D.B. Strukov, G.S. Snider, G. Medeiros-Ribeiro, and R.S. Williams, Nano Lett., 9, 3640 (2009).
26. J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, and R.S. Williams, Nature, 464, 873 (2010).
27. M. Versace and B. Chandler, IEEE Spectr., 47(12), 30 (2010).
28. S. Lee, H. Kim, D.-J. Yun, S-W. Rhee, and K. Yong, Appl. Phys. Lett., 95, 262113 (2009).
29. S.K. Hong, J.E. Kim, S.O. Kim, S.-Y. Choi, and B.J. Cho, IEEE Electron Device Lett., 31, 1005 (2010).
30. H.Y. Jeong, J.Y. Kim, J.W. Kim, J.O. Hwang, J.-E. Kim, J.Y. Lee, T.H. Yoon, B.J. Cho, S.O. Kim, R.S. Ruoff, and S.-Y. Choi, Nano Lett., 10, 4381 (2010).
31. Certain equipment, instruments, or materials are identified in this paper in order to adequately specify the experimental details. Such identification neither implies recommendation by the National Institute of Standards and Technology nor does it imply the materials are necessarily the best available for the purpose.
32. J.Y. Kim, S.H. Kim, H.-H. Lee, K. Lee, W. Ma, X. Gong, and A.J. Heeger, Adv. Mater., 18, 572 (2006).
33. 2 films the switching bias would then be 24.9±2.5 V if the switching was directly caused by the electric field (significantly greater than the experimentally observed values of 7.7±5.4 V).
34. B. Gao, B. Sun, H. Zhang, L. Liu, X. Liu, R. Han, J. Kang, and B. Yu, IEEE Electron Device Lett., 30, 1326 (2009).
35. H.-Q. Ling, A.-D. Li, D. Wu, Y.-F. Tang, Z.-G. Liu, and N.-B. Ming, Mater. Chem. Phys., 75, 170 (2002).