Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet

Solid-State Electronics

Volumn 58, Issue 1, 2011, Pages 48-53

  Kinoshita, K ^a   Okutani, T ^a   Tanaka, H ^a   Hinoki, T ^a,b   Agura, H ^b   Yazawa, K ^b   Ohmi, K ^a   Kishida, S ^a  

^a TOTTORI UNIVERSITY   (Japan)

^b Oike and Co Ltd   (Japan)

Author keywords

Flexible; Ga doped ZnO; Resistive random access memory (ReRAM); Sputtering; Transparent

Indexed keywords

ATOMIC FORCE MICROSCOPES; DC MAGNETRON SPUTTERING; FLEXIBLE; GA DOPED ZNO; HIGH-RESISTANCE STATE; LOW CURRENTS; LOW VOLTAGES; MEMORY EFFECTS; MEMORY LAYERS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; RF PLASMA; SWITCHING MECHANISM; TRANSPARENT; VACANCY DENSITY; VISIBLE REGION;

ELECTRODES; ETHYLENE; GALLIUM; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; SWITCHING; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 79952281112     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.026     Document Type: Conference Paper

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