Fabrication and evaluation of large flexible transparent GZO-ReRAM

Journal of the Vacuum Society of Japan

Volumn 53, Issue 3, 2010, Pages 217-219

  Tanaka, Hayato ^a   Kinoshita, Kentaro ^a   Okutani, Takumi ^a   Makino, Tatsuya ^a   Hinoki, Toshio ^a,b   Ohmi, Koutoku ^a   Kishida, Satoru ^a  

^a TOTTORI UNIVERSITY   (Japan)

^b Oike and Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; DC MAGNETRON SPUTTERING; GA-DOPED ZNO; MEMORY LAYERS; MORPHOLOGICAL CHANGES; RESISTANCE CHANGE EFFECTS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RF PLASMA; VISIBLE REGION;

GALLIUM; RANDOM ACCESS STORAGE; ZINC OXIDE;

ETHYLENE;

EID: 77953557337     PISSN: 18822398     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj2.53.217     Document Type: Article

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