Electrical characterization of Al/AlOx/molecule/Ti/Al devices

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 6, 2005, Pages 1355-1362

  Richter, C A ^a   Stewart, D R ^b   Ohlberg, D A A ^b   Williams, R Stanley ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; CHARACTERIZATION; ELECTRIC INSULATION; INTERFACES (MATERIALS); LANGMUIR BLODGETT FILMS; MOLECULAR DYNAMICS; MONOLAYERS; PARAFFINS; VOLTAGE MEASUREMENT;

CHEMICAL INTERACTIONS; ELECTRONIC MOLECULES; MOLECULAR ELECTRONIC DEVICES; MOLECULAR MONOLAYERS;

ELECTRON DEVICES;

EID: 16344381186     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3169-x     Document Type: Article

References (57)

1. R. McCreery: Electrochem. Soc. Interface 13, 25, 30, 46 (2004); S.M. Lindsay: Electrochem. Soc. Interface 13, 22 (2004); W.G. Kuhr: Electrochem. Soc. Interface 13, 34 (2004); R.M. Metzger: Electrochem. Soc. Interface 13, 40 (2004)
2. R. McCreery: Electrochem. Soc. Interface 13, 25, 30, 46 (2004); S.M. Lindsay: Electrochem. Soc. Interface 13, 22 (2004); W.G. Kuhr: Electrochem. Soc. Interface 13, 34 (2004); R.M. Metzger: Electrochem. Soc. Interface 13, 40 (2004)
3. R. McCreery: Electrochem. Soc. Interface 13, 25, 30, 46 (2004); S.M. Lindsay: Electrochem. Soc. Interface 13, 22 (2004); W.G. Kuhr: Electrochem. Soc. Interface 13, 34 (2004); R.M. Metzger: Electrochem. Soc. Interface 13, 40 (2004)
4. R. McCreery: Electrochem. Soc. Interface 13, 25, 30, 46 (2004); S.M. Lindsay: Electrochem. Soc. Interface 13, 22 (2004); W.G. Kuhr: Electrochem. Soc. Interface 13, 34 (2004); R.M. Metzger: Electrochem. Soc. Interface 13, 40 (2004)
5. C.R. Kagan, M.A. Ratner: MRS Bull. 29, 376 (2004);
6. M.C. Hersham, R.G. Reifenberger: MRS Bull. 29, 385 (2004);
7. A.W. Ghosh, P. Damle, S. Datta, A. Nitzan: MRS Bull. 29, 391 (2004);
8. J.G. Kushmerick, D.L. Allara, T.E. Mallouk, T.S. Mayer: MRS Bull. 29, 396 (2004)
9. J.R. Heath, M.A. Ratner: Phys. Today 56, 43 (2003)
10. K. Kwok, J. Ellenbogen: Mater. Today 5, 28 (2002)
11. J. Chen, M.A. Reed, A.M. Rawlett, J.M. Tour: Science 286, 1550 (1999)
12. M.A. Reed, J. Chen, A.M. Rawlett, D.W. Price, J.M. Tour: Appl. Phys. Lett. 78, 3735 (2001)
13. J. Chen, M.A. Reed: Chem. Phys. 281, 127 (2002)
14. W.Y. Wang, T. Lee, M.A. Reed: Phys. Rev. B 68, 035416 (2003)
15. W.Y. Wang, T. Lee, I. Kretzschmar, M.A. Reed: NanoLetters 4, 643 (2004)
16. M.A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, J.M. Tour: Science 278, 252 (1997)
17. J. Park, A.N. Pasupathy, J.I. Goldsmith, C. Chang, Y. Yaish, J.R. Petta, M. Rinkoski, J.P. Sethna, H.D. Abruna, P.L. McEuen, D.C. Ralph: Nature 417, 722 (2002)
18. W. Liang, M.P. Shores, M. Bockrath, J.R. Long, H. Park: Nature 417, 725 (2002)
19. C.P. Collier, E.W. Wong, M. Belohradsky, F.M. Raymo, J.F. Stoddart, P.J. Kuekes, R.S. Williams, J.R. Heath: Science 285, 391 (1999)
20. C.P. Collier, G. Mattersteig, E.W. Wong, Y. Luo, K. Beverly, J. Sampaio, F.M. Raymo, J.F. Stoddart, J.R. Heath: Science 289, 1172 (2000)
21. D.R. Stewart, D.A.A. Ohlberg, P.A. Beck, Y. Chen, R.S. Williams, J.O. Jeppesen, K.A. Nielsen, J.F. Stoddart: Nanoletters 4, 133 (2004)
22. J.G. Kushmerick, D.B. Holt, J.C. Yang, J. Naciri, M.H. Moore, R. Shashidhar: Phys. Rev. Lett. 89, 086 802 (2002)
23. C.A. Richter, C.A. Hacker, L.J. Richter, E.M. Vogel: Solid-State Electron. 48, 1747 (2004)
24. R.F. Service: Science 302, 556 (2003)
25. J.R. Heath, J.F. Stoddart, R.S. Williams, E.A. Chandross, P.S. Weiss, R.F. Service: Science 303, 1136 (2004)
26. Y. Chen, G.-Y. Jung, D.A.A. Ohlberg, X.M. Li, D.R. Stewart, J.O. Jeppesen, K.A. Nielsen, J.F. Stoddart, R.S. Williams: Nanotechnology 14, 462 (2003)
27. Y. Luo, C.P. Collier, J.O. Jeppesen, K.A. Nielsen, E. Delonno, G. Ho, J. Perkins, H.R. Tseng, T. Yamamoto, J.F. Stoddart, J.R. Heath: Chem. Phys. Chem. 3, 519 (2002)
28. G.Y. Jung, S. Ganapathiappan, X. Li, D.A.A. Ohlberg, D.L. Olynick, Y. Chen, W.M. Tong, R.S. Williams: Appl. Phys. A78, 1169 (2004)
29. N.A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P.M. Petroff, J.R. Heath: Science 300, 112 (2003)
30. J. Chen, W. Wang, M.A. Reed, A.M. Rawlett, D.W. Price, J.M. Tour: Appl. Phys. Lett. 77, 1224 (2000)
31. Y. Chen, D.A.A. Ohlberg, X. Li, D.R. Stewart, R.S. Williams, J.O. Jeppesen, K.A. Nielsen, J.F. Stoddart, D.L. Olynick, E. Anderson: Appl. Phys. Lett. 83, 1610 (2003)
32. Z.J. Donhauser, B.A. Mantopth, K.P. Kelly, L.A. Bumm, J.D. Monnell, J.J. Stapleton, D.W. Price, A.M. Rawlett, D.L. Allara, J.M. Tour, P.S. Weiss: Science 292, 2303 (2001)
33. G.K. Ramachandran, T.J. Hopson, A.M. Rawlett, L.A. Nagahara, A. Primak, S.M. Lindsay: Science 300, 1413 (2003)
34. D.I. Gittins, D. Bethell, D.J. Schiffrin, R.J. Nichols: Nature 408, 67 (2000)
35. x
36. E.P. Gusev, D.A. Buchanan, P. Jamison, T.H. Zabel, M. Copel: Microelectron. Eng. 48, 67 (1999)
37. D.M. Brown, F.K. Heumann, H.R, Philipp, E.A. Taft: J. Electrochem. Soc. 115, 311 (1968)
38. 2 device. A Hewlett-Packard model HP4284A LCR meter [33] was used to acquire capacitance (and conductance) as a function of voltage. The precision of this meter is high and the noise level of this system is low, so that small changes in the device capacitance (such as seen in Figs. 5 and 6) can be confidently observed. However, it is the absolute accuracy of the measurements (along with the chosen model and permittivities) that affects the extracted thickness parameters. The absolute accuracy is dependent upon the parameters of a given device under test. For typical eicosanoic acid devices presented here, the LCR meter is accurate to <≈ 1%. Unintentional stray capacitances arising from cabling and probe-station fixtures are also expected to affect the absolute accuracy of the measured value of capacitance. Thus, it is possible that there is a larger uncertainty than quoted in the extracted thickness values of the dielectric layers in these devices
39. We identify certain commercial equipment, instruments, or materials in this article to specify adequately the experimental procedure. In no case does such identification imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose
40. L.P. Trombetta, F.J. Feigl, R.J. Zeto: J. Appl. Phys. 69, 2512 (1991)
41. M.V. Fischetti: Phys. Rev. B 31, 2099 (1985)
42. R.S. Scott, N.A. Dumin: IEEE Trans. Electron Devices 43, 130 (1996)
43. R. Natarajan, D.J. Dumin: J. Electrochem. Soc. 142, 645 (1995)
44. S.-C. Chang, Z. Li, C.N. Lau, B. Larade, R.S. Williams: Appl. Phys. Lett. 83, 3198 (2003)
45. B. de Boer, M.M. Frank, Y.J. Chabal, W.R. Jiang, E. Garfunkel, Z. Bao: Langmuir 20, 1539 (2004)
46. A.V. Walker, T.B. Tighe, J. Stapleton, B.C. Haynie, S. Upilli, D.L. Allara, N. Winograd: Appl. Phys. Lett. 84, 4008 (2004)
47. K. Konstadinidis, P. Zhang, R.L. Opilla, D.L. Allara: Surf. Sci. 338, 300 (1995)
48. R. McCreery, J. Dieringer, A.O. Solak, B. Snyder, A.M. Nowak, W.R. McGovern, S. Du Vail: J. Am. Chem. Soc. 126, 6200 (2004)
49. C.N. Lau, D.R. Stewart, R.S. Williams, M. Bockrath: NanoLetters 4, 569 (2004)
50. R. McCreery, J. Dieringer, A.O. Solak, B. Snyder, A.M. Nowak, W.R. McGovern, S. Du Vail: J. Am. Chem. Soc. 125, 10 748 (2003)
51. R. McCreery: personal communication
52. W.R. McGovern, F. Anariba, R.L. McCreery: submitted
53. D. Mardare, C. Baban, R. Gavrila, M. Modreanu, G.I. Rusu: Surf. Sci. 507-510, 468 (2002)
54. S.A. Campbell, H.S. Kim, D.C. Gilmer, B. He, T. Ma, W.L. Gladfelter: IBM J. Res. Dev. 43, 383 (1999)
55. Z.J. Donhauser, B.A. Mantooth, T.P. Pearl, K.F. Kelly, S.U. Nanayakkara, P.S. Weiss: Jpn. J. Appl. Phys. 41, 4871 (2002)
56. D.L. Allara, R.G. Nuzzo: Langmuir 1, 45 (1985)
57. D.L. Allara, R.G. Nuzzo: Langmuir 1, 52 (1985)