Deposition atmosphere dependency of nonvolatile resistance change phenomenon in GZO-ReRAM

Journal of the Vacuum Society of Japan

Volumn 53, Issue 3, 2010, Pages 220-222

  Okutani, Takumi ^a   Kinoshita, Kentaro ^a   Tanaka, Hayato ^a   Marino, Tatsuya ^a   Hinoki, Toshio ^a,b   Ohmi, Koutoku ^a   Kishida, Satoru ^a  

^a TOTTORI UNIVERSITY   (Japan)

^b Oike and Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; APPLIED BIAS; BIAS POLARITY; DEPOSITION ATMOSPHERE; GA-DOPED ZNO; I-V MEASUREMENTS; MEMORY EFFECTS; MEMORY LAYERS; NON-VOLATILE; RESISTANCE CHANGE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SYMMETRICAL STRUCTURE;

ATOMIC FORCE MICROSCOPY; GALLIUM; RANDOM ACCESS STORAGE; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 77953593034     PISSN: 18822398     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj2.53.220     Document Type: Article

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