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Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

Investigations on SiN-passivated -gate Al0.27 Ga0.73 N/GaN high electron mobility transistors

(2) Lee, Ching Sung a Kao, An Yung a,b

a FENG CHIA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT APPLICATION; CURRENT DRIVES; FIELD PLATES; GATE DEVICES; GATE DRAIN; GATE LENGTH; HIGH GAIN; HIGH LINEARITY; HIGH TEMPERATURE; OPTICAL MASK; SIN SURFACES; TEMPERATURE RANGE; THRESHOLD STABILITY;

ELECTRON MOBILITY; GALLIUM; HIGH TEMPERATURE APPLICATIONS; LINEARIZATION; PASSIVATION; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73849129175 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3269933 Document Type: Article

Times cited : (6)

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