Relieved kink effects in symmetrically graded In0.45 Al0.55 As Inx Ga1-x As metamorphic high-electron-mobility transistors

Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

  Lee, Ching Sung ^a   Liao, Chen Hsian ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MESFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE TREATMENT;

KINK EFFECTS; PHYSICAL INVESTIGATIONS; VOLTAGE GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 37149023807     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817958     Document Type: Article

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