InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Electrochemical and Solid-State Letters

Volumn 13, Issue 7, 2010, Pages

  Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Ho, Chiu Sheng ^a   Lai, Ying Nan ^a   Huang, Jun Chin ^c   Chou, Bo Yi ^a   Kao, An Yung ^a   Yeh, Hsuan Hsien ^a   Wu, Chuan Luan ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d Transcom Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LEAKAGES; INALAS/INGAAS; METAL OXIDE SEMICONDUCTOR; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; OUTPUT CONDUCTANCE; OUTPUT POWER; OZONE TREATMENT; POWER-ADDED EFFICIENCY; SURFACE FLATNESS; THICK GATE OXIDES; VOLTAGE SWINGS; WATER OXIDATION;

ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; OXIDATION; OZONE;

CHEMICALS REMOVAL (WATER TREATMENT);

EID: 77956204142     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3407624     Document Type: Article

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