A novel transparent AZO-gated Al0.2Ga0.8As/In 0.2Ga0.8As pHEMT and photosensing characteristics thereof

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 725-731

  Lee, Ching Sung ^a   Chou, Bo Yi ^a,b   Hsu, Wei Chou ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Al doped ZnO (AZO); photosensing; pseudomorphic high electron mobility transistor (pHEMT); responsivity; thermal threshold stability; transparent gate; voltage gain

Indexed keywords

AL-DOPED ZNO; PHOTOSENSING; PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR (PHEMT); RESPONSIVITY; THERMAL THRESHOLD STABILITY; TRANSPARENT GATE; VOLTAGE GAIN;

ALUMINUM; ELECTRON MOBILITY; GAIN MEASUREMENT; GALLIUM; PHOTOVOLTAIC EFFECTS; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79952039770     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2102610     Document Type: Article

References (37)

1. L. Y. Chen, H. I. Chen, S. Y. Cheng, T. P. Chen, T. H. Tsai, Y. C. Liu, Y. W. Huang, C. C. Huang, and W. C. Liu, "On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach," IEEE Electron Device Lett., vol. 30, no. 4, pp. 325-327, Apr. 2009.
2. 0.8AsSb/GaAs HEMT," IEEE Electron Device Lett., vol. 28, no. 2, pp. 96-99, Feb. 2007. (Pubitemid 46336432)
3. C. Nguyen and M. Micovic, "The state-of-the-art of GaAs and InP power devices and amplifiers," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 472-478, Mar. 2001. (Pubitemid 32271161)
4. 0.25Ga0.75As/InP high electron mobility transistor," Jpn. J. Appl. Phys., Part I, vol. 42, no. 7A, pp. 4253-4256, Feb. 2003.
5. 1-xAs metamorphic HEMTs with pseudomorphic and symmetrically-graded channels," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1079-1086, Jun. 2005.
6. 1-xAs MHEMT structures on GaAs substrates," J. Appl. Phys., vol. 100, no. 3, pp. 033 705-1-033 705-3, Aug. 2006.
7. 0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors," J. Korean Phys. Soc., vol. 48, no. 4, pp. 653-657, Apr. 2006.
8. R. Thompson, T. Prunty, V. Kaper, and J. R. Shealy, "Performance of the AlGaN HEMT structure with a gate extension," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 292-295, Feb. 2004.
9. Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, L. Lu, C. C. Huang, Z. J. Yang, X. Q. Wang, G. Y. Zhang, X. P. Zhang, D. P. Yu, and B. Shen, "Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition," J. Appl. Phys., vol. 107, no. 4, pp. 043 515-1-043 515-5, Feb. 2010.
10. S. J. Yu, W. C. Hsu, C. S. Lee, C. S. Chang, C. L. Wu, and C. H. Chang, "A flat gain/power responses 6-18 GHz power amplifier MMIC with high PAE by using transformer networks," Microw. Opt. Technol. Lett., vol. 50, no. 1, pp. 205-208, Jan. 2008.
11. S. J. Yu, H.M. Huang, C. S. Lee, C. L.Wu, andW. C. Hsu, "A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer," Microw. Opt. Technol. Lett., vol. 50, no. 8, pp. 2135-2138, Aug. 2008.
12. I. D. Vez, S. G. Hunziker, R. Kohler, P. Royo, M. Moser, andW. Bachtold, "850 nm vertical-cavity laser pigtailed to standard single-mode fibre for radio over fibre transmission," Electron. Lett., vol. 40, no. 19, pp. 1210-1211, Sep. 2004.
13. J. Chen, Y. Chen, Q. Yang, and X. Chen, "GSMBE growth of InP-based MSM/HEMT OEIC structures," J. Cryst. Growth, vol. 227/228, pp. 303-306, Jul. 2001. (Pubitemid 32616851)
14. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, "High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates," IEEE Trans. Electron Devices, vol. 44, no. 4, pp. 513-519, Apr. 1997. (Pubitemid 127764552)
15. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, "Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates," IEEE Electron Device Lett., vol. 16, no. 11, pp. 515-517, Nov. 1995.
16. S. M. Kim, H. W. Choi, K. H. Kim, S. J. Park, and H. H. Yoon, "Preparationof ITO and IZO thin films by using the facing targets sputtering (FTS) method," J. Korean Phys. Soc., vol. 55, no. 5, pp. 1996-2001, Nov. 2009.
17. O. Tuna, Y. Selamet, G. Aygun, and L. Ozyuzer, "High quality ITO thin films grown by dc and RF sputtering without oxygen," J. Phys. D, Appl. Phys., vol. 43, no. 5, p. 055 402, Feb. 2010.
18. Y. Pei, K. J. Vampola, Z. Chen, R. Chu, S. P. DenBaars, and U. K.Mishra, "AlGaN/GaN HEMT with a transparent gate electrode," IEEE Electron Device Lett., vol. 30, no. 5, pp. 439-441, May 2009.
19. D. Zhu, K. Li, F. Luo, and W. Zhou, "Preparation and infrared emissivity of ZnO: Al (AZO) thin films," Appl. Surf. Sci., vol. 255, no. 12, pp. 6145-6148, Apr. 2009.
20. X. Y. Gao, Q. G. Lin, H. L. Feng, Y. F. Liu, and J. X. Lu, "Study on the structural, electrical, and optical properties of aluminum-doped zinc oxide films by direct current pulse reactive magnetron sputtering," Thin Solid Films, vol. 517, no. 16, pp. 4684-4688, Jun. 2009.
21. J. Y. Tseng, Y. T. Chen, M. Y. Yang, C. Y. Wang, P. C. Li, W. C. Yu, Y. F. Hsu, and S. F. Wang, "Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering," Thin Solid Films, vol. 517, no. 23, pp. 6310-6314, Oct. 2009.
22. 2:F films deposited by atmospheric pressure CVD," Thin Solid Films, vol. 517, no. 23, pp. 6287-6289, Oct. 2009.
23. 2:Nb films," Thin Solid Films, vol. 518, no. 4, pp. 1254-1258, Dec. 2009.
24. 4 thin films using photoacoustic spectroscopy," Appl. Phys. A, Mater. Sci. Process., vol. 98, no. 4, pp. 919-925, Mar. 2010.
25. K. Okamura, D. Nikolova, N. Mechau, and H. Hahn, "Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility," Appl. Phys. Lett., vol. 94, no. 18, pp. 183 503-1-183 503-3, May 2009.
26. B. I. Hwang, K. Park, H. S. Chun, C. H. An, H. Kim, and H. J. Lee, "The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors," Appl. Phys. Lett., vol. 93, no. 22, pp. 222 104-1-222 104-3, Dec. 2008.
27. 0.8As high electron mobility transistors," Electrochem. Solid State Lett., vol. 13, pp. H58-H60, Dec. 2009.
28. A. P. Schuetze, W. Lewis, C. Brown, and W. J. Geerts, "A laboratory on the four-point probe technique," Amer. J. Phys., vol. 72, no. 2, pp. 149-153, Feb. 2004. (Pubitemid 38202860)
29. 3 dopant," in Proc. IEEE Annu. Rep. Conf. Elect. Insul. Dielectr. Phenom., 2001, pp. 63-66.
30. K. C. Huang, D. B. Janes, K. J. Webb, and M. R. Melloch, "A transfer length model for contact resistance of two-layer systems with arbitrary interlayer coupling under the contacts," IEEE Trans. Electron Devices, vol. 43, no. 5, pp. 676-684, May 1996. (Pubitemid 126774280)
31. 0.78As pseudomorphic double hetero-junction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 21, no. 2, pp. 760-762, Mar. 2003.
32. C. S. Lee, Y. J. Chen,W. C. Hsu, K. H. Su, J. C. Huang, D. H. Huang, and C. L.Wu, "High-temperature threshold characteristics of a symmetrically-graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor," Appl. Phys. Lett., vol. 88, no. 22, pp. 223 506-1-223 506-3, May 2006.
33. D. A. Neamen, Semiconductor Physics and Devices, 3rd ed. New York: McGraw-Hill, 2003, p. 159.
34. M. N. Afsar, Y. Wang, and A. Moonshiram, "Measurement of transmittance and permittivity of dielectric materials using dispersive Fourier transform spectroscopy," Microw. Opt. Technol. Lett., vol. 38, no. 1, pp. 27-30, Jul. 2003.
35. Y. Takanashi, K. Takahata, and Y. Muramoto, "Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light," IEEE Trans. Electron Devices, vol. 46, no. 12, pp. 2271-2277, Dec. 1999. (Pubitemid 30540697)
36. M. Zegaoui, Z. Xu, N. Saadsaoud, K. H. Tan, W. K. Loke, S. Wicaksono, S. F. Yoon, C. Legrand, D. Decoster, and J. Chazelas, "High-SPEED 1.3- μm p-i-n GaNAsSb/GaAs waveguide photodetector," IEEE Electron Device Lett., vol. 31, no. 7, pp. 704-706, Jul. 2010.
37. A. Nkansah, A. Das, C. Lethien, J. P. Vilcot, N. J. Gomes, I. J. Garcia, J. C. Batchelor, and D. Wake, "Simultaneous dual band transmission over multimode fiber-fed indoor wireless network," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 11, pp. 627-629, Nov. 2006. (Pubitemid 44711822)