High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAsGaAs metamorphic high electron mobility transistor

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Lee, C S ^a   Chen, Y J ^b   Hsu, W C ^c   Su, K H ^c   Huang, J C ^c   Huang, D H ^c   Wu, C L ^d  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d Transcom Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; INDIUM COMPOUNDS; MODULATION; THERMAL EFFECTS;

HIGH-TEMPERATURE CIRCUIT; HIGH-TEMPERATURE LINEARITY; POLARITY CHANGE; THERMAL THRESHOLD COEFFICIENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744799970     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208926     Document Type: Article

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