High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 900-902

  Lee, Youngchul ^a   Bae, Sanghoon ^b   Fonash, Stephen J ^c  

^a LG Chemical Ltd   (South Korea)

^b Foveon Inc   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

High performance; Nickel induced lateral crystallization; Poly Si thin film transistor (TFT)

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; HOLE MOBILITY; NICKEL; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE; TRANSISTORS;

HIGH PERFORMANCE; NICKEL INDUCED LATERAL CRYSTALLIZATION; POLYSILICON THIN FILM TRANSISTOR (TFT);

THIN FILM TRANSISTORS;

EID: 29244487117     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859625     Document Type: Article

References (7)

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