Γ-gate MOS-HEMTs by methods of ozone water oxidation and shifted exposure

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 152-154

  Lee, Ching Sung ^a   Yang, Sheng Han ^a   Lin, Ming Yuan ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Field plate; Gamma gate; metaloxidesemiconductor high electron mobility transistor (MOS HEMT); ozone water oxidation; passivation

Indexed keywords

EPITAXIAL STRUCTURE; FIELD PLATES; GAMMA-GATE; GATE DRAIN; GATE INSULATION; GATE-LENGTH; OPTICAL MASK; OSCILLATION FREQUENCY; SCHOTTKY-GATE; SURFACE PASSIVATION; WATER OXIDATION;

CUTOFF FREQUENCY; OXIDATION; OZONE; PASSIVATION; PLATES (STRUCTURAL COMPONENTS);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79151485449     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093501     Document Type: Article

References (8)

1. Y. Yue, Y. Hao, J. Zhang, J. Ni, W. Mao, Q. Feng, and L. Liu, "AlGaN/GaN MOS-HEMT with HfO2 dielectric and Al2O3 interfacial passivation layer grown by atomic layer deposition," IEEE Electron Device Lett., vol. 29, no. 8, pp. 838-840, Aug. 2008.
2. K. Rajagopalan, R. Droopad, J. Abrokwah, P. Zurcher, P. Fejes, and M. Passlack, "1- (im enhancement mode GaAs N-channel MOSFETs with transconductance exceeding 250 mS/mm," IEEE Electron Device Lett., vol. 28, no. 2, pp. 100-102, Feb. 2007.
3. J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay, "Fabrication and performance of 0.25 (im gate length depletion-mode GaAs-channel MOSFETs with self-aligned InAlP native oxide gate dielectric," IEEE Electron Device Lett., vol. 29, no. 2, pp. 143-145, Feb. 2008.
4. H. R. Chen, M. K. Hsu, S. Y. Chiu, W. T. Chen, G. H. Chen, Y C. Chang, and W. S. Lour, "InGaP/InGaAs pseudomorphic heterodoped- channel FETs with a field plate and a reduced gate length by splitting gate metal," IEEE Electron Device Lett., vol. 27, no. 12, pp. 948-950, Dec. 2006.
5. C. S.Lee and A. Y Kao, "SiN-passivated r-gateAl0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method," Appl. Phys. Lett., vol. 95, no. 9, pp. 093 505-1-093 505-3, Aug. 2009.
6. R. Jayaraman and C. G. Sodini, "A 1// noise technique to extract the oxide trap density near the conduction band edge of silicon," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1773-1782, Sep. 1989.
7. K. W. Lee, P. W. Sze, Y J. Lin, N. Y Yang, M. P. Houng, and Y H. Wang, "InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric," IEEE Electron Device Lett., vol. 26, no. 12, pp. 864-866, Dec. 2005.
8. M. Berroth and R. Bosch, "High-frequency equivalent circuit of GaAs FETs for large-signal applications," IEEE Trans. Microw. Theory Tech., vol. 39, no. 2, pp. 224-229, Feb. 1991.