Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Lai, Po Hsien ^a   Liu, Rong Chau ^b   Fu, Ssu I ^a   Tsai, Yan Ying ^a   Hung, Ching Wen ^a   Chen, Tzu Pin ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; MICROWAVES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SULFUR; THERMAL EFFECTS;

FORMAL PASSIVATIONS; MICROWAVE CHARACTERISTICS; SULFUR PASSIVATION; TEMPERATURE STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846961849     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2409479     Document Type: Article

References (20)

1. J. H. Tsai, IEEE Electron Device Lett., 23, 1 (2003).
2. W. C. Hsu, D. H. Huang, Y. S. Lin, Y. J. Chen, J. C. Huang, and C. L. Wu, IEEE Trans. Electron Devices, 53, 406 (2006).
3. Y. S. Lin and Y. L. Hsieh, J. Electrochem. Soc., 153, G498 (2006).
4. Y. Dong, X. M. Ding, X. Y. Hou, Y. Li, and X. B. Li, Appl. Phys. Lett., 77, 3839 (2000).
5. M. R. Ravi, A. DasGupta, and N. DasGupta, IEEE Trans. Electron Devices, 50, 532 (2003).
6. S. W. Tan, H. R. Chen, W. T. Chen, M. K. Hsu, A. H. Lin, and W. S. Lour, IEEE Trans. Electron Devices, 52, 204 (2005).
7. P. H. Lai, C. W. Chen, C. I. Kao, S. I. Fu, Y. Y. Tsai, C. W. Hung, C. H. Yen, H. M. Chuang, S. Y. Cheng, and W. C. Liu, IEEE Trans. Electron Devices, 53, 1 (2006).
8. D. J. Coleman, Jr., W. R. Wisseman, and D. W. Shaw, Appl. Phys. Lett., 24, 355 (1974).
9. Z. Chen, W. Kim, A. Salvador, S. N. Mohammad, O. Aktas, and H. Morkoc, J. Appl. Phys., 78, 3920 (1995).
10. Y. C. Chou, G. P. Li, D. Leung, Z. Y. Wang, Y. C. Chen, R. Lai, C. S. Wu, R. Kono, P. H. Liu, J. Scarpulla, and D. C. Streit, in Proceedings of 19th Annual IEEE GaAs IC Symposium Digest, 165 (1997).
11. A. Nagayama, S. Yamauchi, and T. Hariu, IEEE Trans. Electron Devices, 47, 517 (2000).
12. O. Wada, S. Yanagisawa, and H. Takanashi, Appl. Phys. Lett., 29, 263 (1976).
13. P. H. Lai, S. I. Fu, Y. Y. Tsai, C. W. Hung, C. H. Yen, H. M. Chuang, and W. C. Liu, J. Electrochem. Soc., 153, G632 (2006).
14. H. Oigawa, J. Fan, Y. Nannichi, H. Sugahara, and M. Oshima, Jpn. J. Appl. Phys., Part 2, 30, L322 (1991).
15. J. L. Wright, M. W. Marks, and K. D. Decker, in Proceedings of IEEE Seventh Semi-Therm Symposium, 110 (1991).
16. H. Ohno, H. Kawanishi, Y. Akagi, Y. Nakajima, and T. Hijikata, Jpn. J. Appl. Phys., Part 1, 29, 2473 (1990).
17. S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed., Wiley, New York (1985).
18. K. E. Bohlin, J. Appl. Phys., 60, 1223 (1986).
19. H. L. Chuang, M. S. Carpenter, M. R. Melloch, M. S. Lundstrom, E. Yablonovitch, and T. J. Gmitter, Appl. Phys. Lett., 57, 2113 (1990).
20. R. Hakimi and M. C. Amann, Semicond. Sci. Technol., 12, 778 (1997).