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Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

SiN-passivated F-gate Al0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method

(2) Lee, Ching Sung a Kao, An Yung a

a FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DC AND RF CHARACTERISTICS; DEVICE PERFORMANCE; FIELD PLATES; FIELD-PLATE STRUCTURES; GATE DRAIN; GATE-LENGTH; GATED STRUCTURES; SURFACE PASSIVATION;

ELECTRON MOBILITY; GALLIUM; PASSIVATION; PLATES (STRUCTURAL COMPONENTS); SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69949142372 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224182 Document Type: Article

Times cited : (11)

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