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Volumn 14, Issue 1, 2011, Pages

Improved thermal stability performance of an MHEMT with a double δ -doped structure

Author keywords

[No Author keywords available]

Indexed keywords

DOPED STRUCTURES; DRAIN SATURATION CURRENT; EXTRINSIC TRANSCONDUCTANCE; HIGHER TEMPERATURES; INALAS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY; THERMAL STABILITY; VOLTAGE COEFFICIENT; WIDE GAP;

EID: 78751479232     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3511720     Document Type: Article
Times cited : (2)

References (13)
  • 2
    • 25644452701 scopus 로고    scopus 로고
    • Mobility enhancement and breakdown behavior in InP-based heterostmcture field-effect transistor
    • DOI 10.1149/1.1938008
    • Y. S. Lin and J. H. Huang, J. Electrochem. Soc., 152, G627 (2005). 10.1149/1.1938008 (Pubitemid 41381151)
    • (2005) Journal of the Electrochemical Society , vol.152 , Issue.8
    • Lin, Y.-S.1    Huang, J.-H.2
  • 6
    • 37149023807 scopus 로고    scopus 로고
    • Relieved kink effects in symmetrically graded In0.45 Al0.55 As Inx Ga1-x As metamorphic high-electron-mobility transistors
    • DOI 10.1063/1.2817958
    • C. S. Lee and C. H. Liao, J. Appl. Phys., 102, 114502 (2007). 10.1063/1.2817958 (Pubitemid 350262155)
    • (2007) Journal of Applied Physics , vol.102 , Issue.11 , pp. 114502
    • Lee, C.-S.1    Liao, C.-H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.