Comparative studies on temperature-dependent characteristics of passivated In0.2 Ga0.8 AsSbGaAs high-electron-mobility transistors

Journal of the Electrochemical Society

Volumn 156, Issue 2, 2009, Pages

  Lee, Ching Sung ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ANTIMONY; CIVIL AVIATION; CRYSTAL GROWTH; ELECTRON MOBILITY; INTEGRATED CIRCUITS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SULFUR; TRANSISTORS; TRANSPORT PROPERTIES;

CARRIER CONFINEMENTS; CARRIER TRANSPORT PROPERTIES; CHANNEL DESIGNS; COMPARATIVE STUDIES; ELECTRON MOBILITY TRANSISTORS; HIGH POWERS; HIGH TEMPERATURES; IMPROVED PERFORMANCES; INTEGRATED CIRCUIT APPLICATIONS; MILLIMETER-WAVE; POWER PERFORMANCES; SULFUR PASSIVATIONS; SURFACE STATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 58049092178     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3031596     Document Type: Article

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