The geometry effect of contact etch stop layer impact on device performance and reliability for 90-nm SOI nMOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2779-2785

  Lai, Chieh Ming ^a   Fang, Yean Kuen ^a   Lin, Chien Ting ^a   Yeh, Wen Kuan ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Contact etch stop layer (CESL); Hot carrier reliability; Length of diffusion (LOD); Strain Si; Thickness effect; Width

Indexed keywords

COMPRESSIVE STRESS; ELECTRIC FIELDS; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRESS; THICKNESS MEASUREMENT;

FLOATING BODY (FB); HOT-CARRIER RELIABILITY; LENGTH OF DIFFUSION; LORENTZIAN NOISE SPECTRUM; N-CHANNEL MOSFETS;

MOSFET DEVICES;

EID: 33750575907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.883818     Document Type: Article

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