The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 19-21

  Sanabria, Chris ^a   Chakraborty, Arpan ^a   Xu, Hongtao ^a   Rodwell, Mark J ^a   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

Author keywords

AlGaN; GaN; Gate leakage; High electron mobility transistor (HEMT); Noise figure; Van der Ziel

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; MESFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GATE LEAKAGE; NOISE FIGURE; VAN DER ZIEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33645467839     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.860889     Document Type: Article

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