Fabrication and performance of 0.25-μm gate length depletion-mode GaAs-channel MOSFETs with self-aligned InAlP native oxide gate dielectric

IEEE Electron Device Letters

Volumn 29, Issue 2, 2008, Pages 143-145

  Zhang, Jing ^a   Kosel, Thomas H ^a   Hall, Douglas C ^a   Fay, Patrick ^a  

^a University of Notre Dame   (United States)

Author keywords

GaAs channel MOSFET; InAlP native oxide; Self aligned fabrication processing

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC RESISTANCE; FABRICATION; GATE DIELECTRICS; METALLIZING; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

NATIVE OXIDE; SELF-ALIGNED FABRICATION PROCESSING;

MOSFET DEVICES;

EID: 39549084503     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.914107     Document Type: Article

References (13)

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