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Volumn 104, Issue 9, 2008, Pages

Assessment of surface damage and sidewall implantation in AlGaN-based high electron mobility transistor devices caused during focused-ion-beam milling

(2) Cullen, David A a Smith, David J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMINUTION; DAMAGE DETECTION; ELECTRON BEAMS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; MILLING (MACHINING); MODEL STRUCTURES; PLATINUM; RESONANT TUNNELING;

ALGAN LAYERS; ALGAN/ALN/GAN; ALGAN/GAN; BEAM ENERGIES; BEAM MILLINGS; CROSS SECTIONS; EXPERIMENTAL STUDIES; FIELD IMAGES; HEMT STRUCTURES; HIGH ELECTRON MOBILITIES; PROTECTIVE LAYERS; PT DEPOSITIONS; SIDE-WALLS; SIDEWALL DAMAGES; SURFACE AMORPHIZATION; SURFACE DAMAGES;

IONS;

EID: 56349137309 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3006626 Document Type: Article

Times cited : (12)

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