Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Sudharsanan, S ^a   Karmalkar, Shreepad ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALUMINUM COMPOSITION; GATE LEAKAGES; GATE-SOURCE VOLTAGE; REVERSE GATE; SILICON SUBSTRATES; TRAP ASSISTED TUNNELING;

ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950589370     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3340826     Document Type: Conference Paper

References (6)

1. S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 0021-4922 41, 5125 (2002). 10.1143/JJAP.41.5125
2. E. J. Miller, X. Z. Dang, and E. T. Yu, J. Appl. Phys. 0021-8979 88, 5951 (2000). 10.1063/1.1319972
3. M. S. Shur, A. D. Bykhovski, R. Gaska, and A. Khan, in Handbook of Thin Film Devices, edited by, C. E. C. Wood, and, M. H. Francombe, (Academic, San Diego, 2000), Vol. 1, p. 299. 10.1016/B978-012265320-9/50075-1
4. D. Mahaveer Sathaiya and S. Karmalkar, J. Appl. Phys. 0021-8979 99, 093701 (2006). 10.1063/1.2191620 (Pubitemid 43781943)
5. D. M. Sathaiya and S. Karmalkar, IEEE Trans. Electron Devices 0018-9383 54, 2614 (2007). 10.1109/TED.2007.904993 (Pubitemid 47534480)
6. M. Fieger, M. Eickelkamp, L. Rahimzadeh Koshroo, Y. Dikme, A. Noculak, H. Kalisch, M. Heuken, R. H. Jansen, and A. Vescan, J. Cryst. Growth 0022-0248 298, 843 (2007). 10.1016/j.jcrysgro.2006.10.113 (Pubitemid 46149776)