Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMT's

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 473-475

  Somerville, Mark H ^b   Del Alamo, Jesús A ^a,b   Hoke, William ^c  

^a IEEE

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GATES (TRANSISTOR); IONIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

IMPACT IONIZATION; KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030271039     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537079     Document Type: Article

References (14)

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