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Volumn 158, Issue 4, 2011, Pages

Investigations on InP/InAlAsSb/GaAs metamorphic high electron mobility transistors with a dual-composition-graded InxGa1-xAs 1-ySby Channel and different schottky-barrier gate structures

(2) Lee, Ching Sung a Chien, Wei Tin a

a FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER-CARRIER SCATTERING; COMPOSITION-GRADED; CURRENT DRIVES; DEVICE CHARACTERISTICS; ELECTRON CONCENTRATION; GAAS; GATE LEAKAGES; GATE STRUCTURE; HIGH FREQUENCY CHARACTERISTICS; HIGH TEMPERATURE; HIGH-TEMPERATURE DEVICES; INP; KINK EFFECT; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY BARRIERS; THRESHOLD STABILITY;

ALUMINUM; ELECTRON MOBILITY; GALLIUM; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PLATINUM; THERMIONIC EMISSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955134535 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3552933 Document Type: Article

Times cited : (15)

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