Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Solid-State Electronics

Volumn 54, Issue 3, 2010, Pages 275-278

  Tsai, Jung Hui ^a   Lour, Wen Shiung ^b   Huang, Chia Hong ^a   Dale, Ning Feng ^a   Lee, Yuan Hong ^a   Sheng, Jhih Syuan ^a   Liu, Wen Chau ^c  

^a NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Camel like gate; Delta doped; Device linearity; Field effect transistor; InGaP GaAs InGaAs; p Channel

Indexed keywords

CAMEL-LIKE GATE; CONFINEMENT EFFECTS; DELTA-DOPED; DEVICE PERFORMANCE; DRAIN SATURATION CURRENT; ENERGY BAND; EXCELLENT PERFORMANCE; GAAS; GATE VOLTAGES; HIGH FREQUENCY HF; HOLE DISTRIBUTION; INGAAS QUANTUM WELLS; INGAP/GAAS/INGAAS; LINEAR AMPLIFIERS; TURN ON VOLTAGE;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM; HETEROJUNCTIONS; HIGH FREQUENCY AMPLIFIERS; LINEARIZATION;

FIELD EFFECT TRANSISTORS;

EID: 76449108175     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.004     Document Type: Article

References (14)

1. Mok P.K.T., and Salama C.A.T. IEEE Trans Electron Dev 41 (1994) 246
2. Yoneyama M., Miyamoto Y., Otsuji T., Toba H., Yamane Y., Ishibashi T., et al. J Lightwave Technol 18 (2000) 34
3. Ma B.Y., Bergman J., Chen P., Hacker J.B., Sullivan G., Nagy G., et al. IEEE Trans Microw Theory 54 (2006) 4448
4. Liu W.C., Yu K.H., Liu R.C., Lin K.W., Lin K.P., Yen C.H., et al. IEEE Trans Electron Dev 48 (2001) 2677
5. Tsai J.H., Weng T.Y., and Li C.M. Semicond Sci Technol 23 (2008) 075018
6. Chang W.L., Cheng S.Y., Shie Y.H., Pan H.J., Lour W.S., and Liu W.C. Semicond Sci Technol 14 (1999) 307
7. Tsai J.H. IEEE Electron Dev Lett 26 (2005) 429
8. Lin Y.S., and Hsieh Y.L. J Electrochem Soc 153 (2006) G498
9. Roberts J.M., Harris J.J., Woods N.J., and Hopkinson M. Superlattice Microstruct 23 (1998) 187
10. Kao M.J., Shieh H.M., Hsu W.C., Lin T.Y., Wu Y.H., and Hsu R.T. IEEE Trans Electron Dev 43 (1996) 1181
11. Huang D.H., Hsu W.C., Lin Y.S., Yeh J.H., and Huang J.C. Semicond Sci Technol 22 (2007) 784
12. Kim H.J., Kim S.H., Lee J.I., Kang K.N., Kim D.M., and Cho K. Electron Lett 34 (1998) 126
13. Tsai J.H., and Li C.M. Solid-State Electron 52 (2008) 146
14. Wu C.C., and Lu S.S. IEEE Electron Dev Lett 8 (1992) 418