Performance of surface and gate-engineered AlGaAsInGaAs pseudomorphic high-electron mobility transistors

Journal of the Electrochemical Society

Volumn 156, Issue 6, 2009, Pages

  Lin, Yu Shyan ^a   Liang, Shih Kai ^a   Lin, You Song ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS-INGAAS; BARRIER LAYERS; BEFORE AND AFTER; CHEMICAL COMPOSITIONS; EXPERIMENTAL DATUM; GAAS SUBSTRATES; HETEROSTRUCTURES; HIGH TEMPERATURES; HIGH-FREQUENCY CHARACTERISTICS; METALLIZATION; PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS; RADIO FREQUENCIES; REVERSE BREAKDOWN VOLTAGES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SULFUR TREATMENTS; TURN-ON VOLTAGES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMMONIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; PASSIVATION; POLYSULFIDES; SCHOTTKY BARRIER DIODES; SULFUR; SURFACE MORPHOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 65449181071     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3098977     Document Type: Article

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