Atomic layer deposition of ta2o5 films using ta(oc2h5)5 and nh3

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 469-471

  Song, Hyun Jung ^a   Koh, Wonyong ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT DENSITY; FILM GROWTH; PERMITTIVITY; RAPID THERMAL ANNEALING; SUBSTRATES; TANTALUM COMPOUNDS; THERMAL EFFECTS; THICK FILMS;

ATOMIC LAYER DEPOSITION; GAS PHASE REACTION; TANTALUM OXIDE; TANTALUM PENTAETHOXIDE;

DIELECTRIC FILMS;

EID: 0033349705     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-469     Document Type: Article

References (5)

1. C. H, L. Goodman and M. V. Pessa, J. Appl. Phys. 60, R65 (1986).
2. K. Kukli, J. Aarik, A. Aidla, O. Kohan, T. Uustare, and V. Sammelselg, Thin Solid Films 260, 135 (1996).
3. K. Kukli, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 142, 1670 (1995).
4. K. Tominaga, R. Muhammet, I. Kobayashi, and M. Okada, Jpn. J. Appl. Phys., 31, L585 (1992).
5. J. W. Klaus, O. Sneh, and S. M. George, Science, 278, 1934 (1997).