Atomic layer deposited high-k nanolaminate capacitors

Solid-State Electronics

Volumn 54, Issue 10, 2010, Pages 1076-1082

  Smith, S W ^a   McAuliffe, K G ^a   Conley Jr , J F ^a  

^a OREGON STATE UNIVERSITY   (United States)

Author keywords

ALD; Aluminum oxide; Atomic layer deposition; Nanolaminate; Tantalum oxide

Indexed keywords

ALD; ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; BI-LAYER; BILAYER THICKNESS; DIELECTRIC CONSTANTS; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; FIGURE OF MERIT; HIGHER TEMPERATURES; LAMINATE FILMS; LOW TEMPERATURES; NANOLAMINATE; NANOLAMINATE FILMS; PURE AL;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC PROPERTIES; OXIDES; PERMITTIVITY; TANTALUM; TANTALUM OXIDES;

LAMINATES;

EID: 77955413299     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.007     Document Type: Article

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