Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Deen, D A ^a   Storm, D F ^a   Bass, R ^a   Meyer, D J ^a   Katzer, D S ^a   Binari, S C ^a   Lacis, J W ^b   Gougousi, T ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC LAYER DEPOSITED; BREAKDOWN VOLTAGE; GATE INSULATION; GATE INSULATOR; HETEROSTRUCTURES; INTERFACE STATE DENSITY; MULTIJUNCTION; SMALL SIGNAL;

DRAIN CURRENT; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TANTALUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78751555804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531551     Document Type: Article

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