Atomic layer deposition of dielectric Nb2O5 films using the NbI5-O2 precursor combination

Proceedings - Electrochemical Society

Volumn PV 2005-09, Issue , 2005, Pages 598-604

  Rooth, Mårten ^a   Kukli, Kaupo ^b,c   Hårsta, Anders ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; NIOBIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); CAPACITANCE-VOLTAGE MEASUREMENTS; DIELECTRIC BEHAVIOR; METAL PRECURSORS;

DIELECTRIC FILMS;

EID: 31744440766     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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