Charge transport in non-polar and semi-polar III-V nitride heterostructures

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Konar, Aniruddha ^a   Verma, Amit ^a   Fang, Tian ^a   Zhao, Pei ^a   Jana, Raj ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; ELECTRONIC BAND-STRUCTURE; HIGH-FIELD; III-NITRIDE SEMICONDUCTORS; III-V NITRIDES; NON-POLAR; OPEN PROBLEMS; POLAR ORIENTATION; POLARIZATION FIELD; POLARIZATION ORIENTATION; QUANTUM WELL; SCATTERING MECHANISMS; VELOCITY SATURATION;

CRYSTALS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; POLARIZATION; SCATTERING; TRANSPORT PROPERTIES;

CRYSTAL ORIENTATION;

EID: 84856120846     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024018     Document Type: Article

References (73)

1. Waltereit P et al 2000 Nature 406 865
2. Eastman L F and Mishra U K 2002 IEEE Spectrum 39 28
3. Khan M A, Bhattarai A, Kuznia J N and Olson D T 1993 Appl. Phys. Lett. 63 1214
4. Nakamura S, Senoh M, Nagahama S, Iwasa N, Matsushita T and Mukai T 2000 Appl. Phys. Lett. 76 22
5. Wood C and Jena D 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (New York: Springer)
6. Jin Seo Im, Kollmer H, Off J, Sohmer A, Scholz F and Hangleiter A 1998 Phys. Rev. B 57 R9435
7. Cai Y et al 2005 IEEE Electron Device Lett. 26 435
8. Chakraborty A, Baker T J, Haskell B A, Wu F, Speck J S, Denbaars S P, Nakamura S and Mishra U K 2005 Japan. J. Appl. Phys. 44 L945
9. Piprek J 2007 Nitride Semiconductor Devices: Principles and Simulations (Weinheim: Wiley-VCH)
10. Vanfleet R, Simmons J, Maruska H, Hill D, Chou M and Chai B 2003 Appl. Phys. Lett. 83 1139
11. Gardner N, Kim J, Wierer J, Shen Y and Krames M 2005 Appl. Phys. Lett. 86 111101
12. Haskell B A, Baker T J, McLaurin M, Wu F, Fini P T, Denbaars S P, Speck J S and Nakamura S 2005 Appl. Phys. Lett. 86 111917
13. Ng H 2002 Appl. Phys. Lett. 80 4369
14. Baker T J, Haskell B A, Wu F, Fini P T, Speck J S and Nakamura S 2005 Japan. J. Appl. Phys 44 L920
15. Takeuchi T, Amano H and Akasaki I 2000 Japan. J. Appl. Phys. 39 413
16. Ghosh S, Waltereit P, Brandt O, Grahn H T and Ploog K H 2002 Phys. Rev. B 65 075202
17. Kane E O 1957 J. Phys. Chem. Solids 1 249
18. Chuang S L and Chuang C S 1996 Phys. Rev. B 54 2491
19. Lowdin P 1951 J. Phys. Chem. 19 1396
20. Park S H and Chuang S L 1999 Phys. Rev. B 59 4725
21. Park S H, Ahn D and Chuang S L 2007 IEEE J. Quantum Electron. 43 1175
22. Scheibenzuber W G, Schwarz U T, Veprek R G, Witzigmann B and Hangleiter A 2009 Phys. Rev. B 80 115320
23. Hinckley J M and Singh J 1990 Phys. Rev. B 42 3546
24. Konar A, Fang T, Sun N and Jena D 2010 Phys. Rev. B 82 193301
25. Konar A, Fang T, Sun N and Jena D 2011 Appl. Phys. Lett. 98 022109
26. Haskell B A et al 2005 J. Electron. Mater. 34 357
27. Hsiao C et al 2010 J. Appl. Phys. 107 073502
28. Ueno K, Kobayashi A, Ohta J and Fujioka H 2010 Japan. J. Appl. Phys. 49 060213
29. McLaurin M, Mates T E, Wu F and Speck J S 2006 J. Appl. Phys. 100 063707
30. McLaurin M and Speck J S 2007 Phys. Status Solidi 1 110
31. Baik K H et al 2010 IEEE. Photon. Technol. Lett. 22 595
32. Stampfl C and Van de Walle C G 1998 Phys. Rev. B 24 R15052
33. Rebane Y T, Shreter Y G and Albrecht M 1997 Phys. Status Solidi a 164 141
34. Griffiths D J 2005 Introduction to Quantum Mechanics (Singapore: Pearson Education)
35. Erginsoy C 1950 Phys. Rev. 79 1013
36. Brooks H 1951 Phys. Rev. 83 879
37. Weimann N G and Eastman L F 1998 J. Appl. Phys. 83 3656
38. Lo I et al 2008 Appl. Phys. Lett. 92 202106
39. Zakharov D N and Liliental-Webber Z 2005 Phys. Rev. B 71 235334
40. Seeger K 1999 Semiconductor Physics: An Introduction 7th edn (New York: Springer) p 173
41. Pdr B 1966 Phys. Status Solidi 16 K167
42. Look D C and Sizelove J R 1998 Phys. Rev. Lett. 82 1237
43. Jena D, Gossard A C and Mishra U K 2000 Appl. Phys. Lett. 76 1707
44. Look D C et al 1997 Solid State Commun. 102 297
45. Jonen H et al 2011 Appl. Phys. lett. 99 011901
46. Wang H et al 2004 Appl. Phys. Lett. 84 499
47. Chen C Q et al 2002 Appl. Phys. Lett. 81 3194
48. Paskova T et al 2005 J. Cryst. Growth 281 55
49. Hirai A et al 2007 Appl. Phys. Lett. 90 121119
50. Sun Y J et al 2002 J. Appl. Phys. 92 5714
51. Brandt O, Sun Y J, Dweritz L and Ploog K H 2004 Physica E 23 339
52. Lymperakis L and Neugebauer J 2009 Phys. Rev. B 79 241308
53. Ferry D K and Goodnick S M 1999 Transport in Nanostructures (New York: Cambridge University Press)
54. Ridley B K 1999 Electrons and Phonons in Semiconductor Multilayers 1st edn (New York: Cambridge University Press) p 26
55. Davis J 2006 Physics of Low-Dimensional Semiconductors: An Introduction 6th edn (Cambridge: Cambridge University Press)
56. Gelmont B L, Shur M and Stroscio M 1995 J. Appl. Phys. 77 657
57. Schliemann J and Loss D 2003 Phys. Rev. B 68 165311
58. Zheng Y et al 2003 J. Phys. Soc. Japan 72 2568
59. Schmidt M C, Kim K-C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2007 Japan. J. Appl. Phys. 46 L190
60. Enya Y et al 2009 Appl. Phys. Express 2 082101
61. Dadgar A, Ravash R, Veit P, Schmidt G, Muller M, Dempewolf A, Bertram F, Wieneke M, Christen J and Krost A 2011 Appl. Phys. Lett. 99 021905
62. Massoud H Z 1988 J. Appl. Phys. 63 2000
63. Crosslight Software Inc., Burnaby, Canada ApSys http://www.crosslight.com - ref-separator -
64. Simon J, Protasenko V, Lian C, Xing H and Jena D 2010 Science 327 60
65. Verma J, Simon J, Protasenko V, Kosel T, Xing H and Jena D 2011 Appl. Phys. Lett. 99 171104
66. Akyol F, Nath D N, Gu E, Park P S and Rajan S 2011 Japan. J. Appl. Phys. 50 052101
67. Kroemer H 1958 Phys. Rev. 109 1856
68. Ridley B K, Schaff W J and Eastman L F 2005 J. Appl. Phys. 97 094503
69. Jena D et al 2011 Phys. Status Solidi a 208 1511
70. Grundmann M J and Mishra U K 2007 Phys. Status Solidi c 4 2830
71. Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P and Jena D 2009 Phys. Rev. Lett. 103 026801
72. Krishnamoorthy S, Nath D N, Akyol F, Park P S, Esposto M and Rajan S 2010 Appl. Phys. Lett. 97 203502
73. S-Bhalla G, Bell C, Ravichandran J, Siemons W, Hikita Y, Salahuddin S, Hebard A F, Hwang H Y and Ramesh R 2011 Nat. Phys. 7 80