Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1511-1516

  Jena, Debdeep ^a   Simon, John ^a   Wang, Albert ^a   Cao, Yu ^a   Goodman, Kevin ^a   Verma, Jai ^a   Ganguly, Satyaki ^a   Li, Guowang ^a   Karda, Kamal ^a   Protasenko, Vladimir ^a   Lian, Chuanxin ^a   Kosel, Thomas ^a   Fay, Patrick ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

Author keywords

dipole; doping; engineering; GaN; lasers; LEDs; polarization; transistors; tunneling

Indexed keywords

DEVICE DESIGN; DIPOLE; GAN; HETEROSTRUCTURE DEVICES; III-NITRIDE; III-V NITRIDES; LEDS; PIEZOELECTRIC POLARIZATIONS;

GALLIUM NITRIDE; HETEROJUNCTIONS;

POLARIZATION;

EID: 79960092874     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001189     Document Type: Article

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