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Japanese Journal of Applied Physics

Volumn 50, Issue 5 PART 1, 2011, Pages

N-polar III-nitride green (540 nm) light emitting diode

(5) Akyol, Fatih a Nath, Digbijoy N a Gür, Emre a,b Park, Pil Sung a Rajan, Siddharth a

a The Ohio State University (United States)

b ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; GREEN EMISSIONS; GREEN LIGHT EMITTING DIODES; GROWTH MODELS; HIGH QUALITY; III-NITRIDE; LED STRUCTURE; MULTIPLE QUANTUM WELLS; PEAK EMISSION WAVELENGTH; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM WELL; TEST STRUCTURE; WAVELENGTH RANGES;

LIGHT; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 79957582301 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.052101 Document Type: Article

Times cited : (86)

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