Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1139-1141

  Vanfleet, R R ^a   Simmons, J A ^a   Maruska, H P ^b   Hill, D W ^b   Chou, M M C ^b   Chai, B H ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Crystal Photonics Inc Sanford   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LITHIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

POLARITY;

SEMICONDUCTING FILMS;

EID: 0042926664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1599962     Document Type: Article

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