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Volumn 98, Issue 2, 2011, Pages
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Charged basal stacking fault scattering in nitride semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
BASAL STACKING FAULTS;
CHARGE TRANSPORT;
CHARGE TRANSPORT IN SEMICONDUCTORS;
EXPERIMENTAL DATA;
GALLIUM NITRIDE FILMS;
NITRIDE SEMICONDUCTORS;
QUANTUM TUNNELING;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
QUANTUM CHEMISTRY;
STACKING FAULTS;
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EID: 78751538259
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3543846 Document Type: Article |
Times cited : (22)
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References (17)
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