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Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 19, 2010, Pages

Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering

(4) Konar, Aniruddha a Fang, Tian a Sun, Nan a Jena, Debdeep a

a UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78649747065 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.82.193301 Document Type: Article

Times cited : (9)

References (27)

1
- 0034710677
- Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- DOI 10.1038/35022529
- P. Waltereit, Nature (London) 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
- (2000) Nature , vol.406 , Issue.6798 , pp. 865-868
- Waltereit, P.¹ Brandt, O.² Trampert, A.³ Grahn, H.T.⁴ Monniger, J.⁵ Ramsteiner, M.⁶ Relche, M.⁷ Ploog, K.H.⁸

2
- 18244377392
- 10.1007/s11664-005-0110-9
- B. A. Haskell, J. Electron. Mater. 34, 357 (2005). 10.1007/s11664-005- 0110-9
- (2005) J. Electron. Mater. , vol.34 , pp. 357
- Haskell, B.A.¹

3
- 58449102114
- 10.1143/APEX.2.011001
- T. Fujiwara, Appl. Phys. Express 2, 011001 (2009). 10.1143/APEX.2.011001
- (2009) Appl. Phys. Express , vol.2 , pp. 011001
- Fujiwara, T.¹

4
- 0037112959
- 2
- DOI 10.1063/1.1513874
- Y. J. Sun, J. Appl. Phys. 92, 5714 (2002). 10.1063/1.1513874 (Pubitemid 35445564)
- (2002) Journal of Applied Physics , vol.92 , Issue.10 , pp. 5714-5719
- Sun, Y.J.¹ Brandt, O.² Jahn, U.³ Liu, T.Y.⁴ Trampert, A.⁵ Cronenberg, S.⁶ Dhar, S.⁷ Ploog, K.H.⁸

5
- 3142706515
- 10.1016/j.physe.2004.03.014
- O. Brandt, Y. J. Sun, L. Dweritz, and K. H. Ploog, Physica E (Amsterdam) 23, 339 (2004). 10.1016/j.physe.2004.03.014
- (2004) Physica e (Amsterdam) , vol.23 , pp. 339
- Brandt, O.¹ Sun, Y.J.² Dweritz, L.³ Ploog, K.H.⁴

6
- 67650076967
- 10.1103/PhysRevB.79.241308
- L. Lymperakis and J. Neugebauer, Phys. Rev. B 79, 241308 (2009). 10.1103/PhysRevB.79.241308
- (2009) Phys. Rev. B , vol.79 , pp. 241308
- Lymperakis, L.¹ Neugebauer, J.²

7
- 33947578738
- Defect-mediated surface morphology of nonpolar m -plane GaN
- DOI 10.1063/1.2715126
- A. Hirai, Appl. Phys. Lett. 90, 121119 (2007). 10.1063/1.2715126 (Pubitemid 46482195)
- (2007) Applied Physics Letters , vol.90 , Issue.12 , pp. 121119
- Hirai, A.¹ Haskell, B.A.² McLaurin, M.B.³ Wu, F.⁴ Schmidt, M.C.⁵ Kim, K.C.⁶ Baker, T.J.⁷ Denbaars, S.P.⁸ Nakamura, S.⁹ Speck, J.S.¹⁰

8
- 1242352448
- 10.1063/1.1644054
- H. Wang, Appl. Phys. Lett. 84, 499 (2004). 10.1063/1.1644054
- (2004) Appl. Phys. Lett. , vol.84 , pp. 499
- Wang, H.¹

9
- 20844461469
- Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
- DOI 10.1016/j.jcrysgro.2005.03.013, PII S0022024805003039, The Internbational Workshop on Bulk Nitride Semiconductors III
- T. Paskova, J. Cryst. Growth 281, 55 (2005). 10.1016/j.jcrysgro.2005.03. 013 (Pubitemid 40858047)
- (2005) Journal of Crystal Growth , vol.281 , Issue.1 , pp. 55-61
- Paskova, T.¹ Darakchieva, V.² Paskov, P.P.³ Birch, J.⁴ Valcheva, E.⁵ Persson, P.O.A.⁶ Arnaudov, B.⁷ Tungasmitta, S.⁸ Monemar, B.⁹

10
- 79956008048
- GaN homoepitaxy on freestanding (1100) oriented GaN substrates
- DOI 10.1063/1.1516230
- C. Q. Chen, Appl. Phys. Lett. 81, 3194 (2002). 10.1063/1.1516230 (Pubitemid 35360535)
- (2002) Applied Physics Letters , vol.81 , Issue.17 , pp. 3194
- Chen, C.Q.¹ Gaevski, M.E.² Sun, W.H.³ Kuokstis, E.⁴ Zhang, J.P.⁵ Fareed, R.S.Q.⁶ Wang, H.M.⁷ Yang, J.W.⁸ Simin, G.⁹ Khan, M.A.¹⁰ Maruska, H.-P.¹¹ Hill, D.W.¹² Chou, M.M.C.¹³ Chai, B.¹⁴

11
- 33749348190
- Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
- DOI 10.1063/1.2338602
- M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, J. Appl. Phys. 100, 063707 (2006). 10.1063/1.2338602 (Pubitemid 44496121)
- (2006) Journal of Applied Physics , vol.100 , Issue.6 , pp. 063707
- McLaurin, M.¹ Mates, T.E.² Wu, F.³ Speck, J.S.⁴

12
- 77950536590
- 10.1109/LPT.2010.2042950
- K. H. Baik, IEEE Photon. Technol. Lett. 22, 595 (2010). 10.1109/LPT.2010.2042950
- (2010) IEEE Photon. Technol. Lett. , vol.22 , pp. 595
- Baik, K.H.¹

13
- 84938518330
- Cambridge University Press, New York
- D. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge University Press, New York, 1999).
- (1999) Transport in Nanostructures
- Ferry, D.K.¹ Goodnick, S.M.²

14
- 0003931636
- 1st ed. (Cambridge University, New York
- B. K. Ridley, Electrons and Phonons in Semiconductor Multilayers, 1st ed. (Cambridge University, New York, 1999), p. 26.
- (1999) Electrons and Phonons in Semiconductor Multilayers , pp. 26
- Ridley, B.K.¹

15
- 34047094264
- Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
- DOI 10.1103/PhysRevLett.98.136805
- D. Jena and A. Konar, Phys. Rev. Lett. 98, 136805 (2007). 10.1103/PhysRevLett.98.136805 (Pubitemid 46515810)
- (2007) Physical Review Letters , vol.98 , Issue.13 , pp. 136805
- Jena, D.¹ Konar, A.²

16
- 37549032705
- 10.1063/1.2825615
- A. Konar and D. Jena, J. Appl. Phys. 102, 123705 (2007). 10.1063/1.2825615
- (2007) J. Appl. Phys. , vol.102 , pp. 123705
- Konar, A.¹ Jena, D.²

17
- 40949157889
- Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs
- DOI 10.1109/TED.2007.902712
- S. Jin, IEEE Trans. Electron Devices 54, 2191 (2007). 10.1109/TED.2007.902712 (Pubitemid 351485737)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2191-2203
- Jin, S.¹ Fischetti, M.V.² Tang, T.-W.³

18
- 0003900719
- 6th ed. (Cambridge University, Cambridge, England
- J. Davis, Physics of Low Dimensional Semiconductors: An Introduction, 6th ed. (Cambridge University, Cambridge, England, 2006).
- (2006) Physics of Low Dimensional Semiconductors: An Introduction
- Davis, J.¹

19
- 0001255051
- 10.1063/1.359051
- B. L. Gelmont, M. Shur, and M. Stroscio, J. Appl. Phys. 77, 657 (1995). 10.1063/1.359051
- (1995) J. Appl. Phys. , vol.77 , pp. 657
- Gelmont, B.L.¹ Shur, M.² Stroscio, M.³

20
- 34247846340
- High-mobility window for two-dimensional electron gases at ultrathin AlNGaN heterojunctions
- DOI 10.1063/1.2736207
- Y. Cao and D. Jena, Appl. Phys. Lett. 90, 182112 (2007). 10.1063/1.2736207 (Pubitemid 46701175)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182112
- Cao, Y.¹ Jena, D.²

21
- 0242458170
- 10.1143/JPSJ.72.2568
- Y. Zheng, J. Phys. Soc. Jpn. 72, 2568 (2003). 10.1143/JPSJ.72.2568
- (2003) J. Phys. Soc. Jpn. , vol.72 , pp. 2568
- Zheng, Y.¹

22
- 2642575897
- 10.1103/PhysRevB.68.165311
- J. Schliemann and D. Loss, Phys. Rev. B 68, 165311 (2003). 10.1103/PhysRevB.68.165311
- (2003) Phys. Rev. B , vol.68 , pp. 165311
- Schliemann, J.¹ Loss, D.²

23
- 78649725689
- 2 (u) = -1 1 dx |x| ⊃( ⊃|x⊃| ⊃+u ⊃) 2 (1+v x2 ) /√ 1- x2 =4/3+u (π+2u ) + v 60 (64+45πu+80 u2 ).
- 2 (u) = - 1 1 d x | x | ⊃( ⊃| x ⊃| ⊃+ u ⊃) 2 (1 + v x 2) / √ 1 - x 2 = 4 / 3 + u (π + 2 u) + v 60 (64 + 45 π u + 80 u 2).

24
- 0141990606
- 10.1063/1.1600519
- I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003). 10.1063/1.1600519
- (2003) J. Appl. Phys. , vol.94 , pp. 3675
- Vurgaftman, I.¹ Meyer, J.R.²

25
- 51149213981
- 10.1063/1.98305
- H. Sakaki, Appl. Phys. Lett. 51, 1934 (1987). 10.1063/1.98305
- (1987) Appl. Phys. Lett. , vol.51 , pp. 1934
- Sakaki, H.¹

26
- 84889835578
- Springer, New York
- C. Wood and D. Jena, Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (Springer, New York, 2008).
- (2008) Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications
- Wood, C.¹ Jena, D.²

27
- 0003470014
- Brooks/Cole, England
- N. W. Ashcroft and D. Mermin, Solid State Physics (Brooks/Cole, England, 1976).
- (1976) Solid State Physics
- Ashcroft, N.W.¹ Mermin, D.²

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