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Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

(4) McLaurin, M a,b Mates, T E c Wu, F c Speck, J S c

a University of California (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

FREE ELECTRON CONCENTRATIONS; HOLE CONCENTRATIONS;

ANISOTROPY; DOPING (ADDITIVES); HALL EFFECT; HOLE MOBILITY; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 33749348190 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2338602 Document Type: Article

Times cited : (59)

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