Effects of basal stacking faults on electrical anisotropy of nonpolar a-plane (112̄0) GaN light-emitting diodes on sapphire substrate

IEEE Photonics Technology Letters

Volumn 22, Issue 9, 2010, Pages 595-597

  Baik, Kwang Hyeon ^a   Seo, Yong Gon ^a   Hong, Soon Ku ^b   Lee, Seogwoo ^c   Kim, Jaebum ^a   Son, Ji Su ^a   Hwang, Sung Min ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Chungnam National University   (South Korea)

^c Wavesquare Inc   (South Korea)

Author keywords

A plane; Basal stacking faults (BSFs); Gallium nitride; Light emitting diode (LED); Nonpolar

Indexed keywords

A-PLANE; A-PLANE GAN; ANISOTROPIC CONDUCTIVITY; BASAL STACKING FAULTS; BASAL STACKING FAULTS (BSFS); CARRIER SCATTERING; DEVICE CHARACTERISTICS; ELECTRICAL ANISOTROPY; GAN LAYERS; GAN LIGHT-EMITTING DIODES; NITRIDE FILMS; NON-POLAR; OUTPUT POWER; SAPPHIRE SUBSTRATES;

ANISOTROPY; DIODES; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; STACKING FAULTS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77950536590     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2042950     Document Type: Article

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