Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5714-5719

  Sun, Yue Jun ^a   Brandt, Oliver ^a   Jahn, Uwe ^a   Liu, Tian Yu ^a   Trampert, Achim ^a   Cronenberg, Sven ^a   Dhar, Subhabrata ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC SURFACES; HIGH DENSITY; HIGH TEMPERATURE; LOW TEMPERATURES; M-PLANE; NUCLEATION LAYERS; PHOTOLUMINESCENCE SPECTRUM; STRUCTURAL AND OPTICAL PROPERTIES; SURFACE CORRUGATIONS; THERMAL ROUGHENING; TIME-RESOLVED PHOTOLUMINESCENCE; ULTRA-THIN;

GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SURFACE MORPHOLOGY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

NUCLEATION;

EID: 0037112959     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513874     Document Type: Article

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