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Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(6) Krishnamoorthy, Sriram a Nath, Digbijoy N a Akyol, Fatih a Park, Pil Sung a Esposto, Michele a Rajan, Siddharth a

a Ohio State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BRILLOUIN; ELECTRONIC APPLICATION; HETEROSTRUCTURES; HIGH CURRENT DENSITIES; III-NITRIDE; INTERBAND TUNNELING; MAXIMUM CURRENT DENSITY; NARROW BAND GAP; REVERSE BIAS; TUNNEL JUNCTION DIODE; TURN ON VOLTAGE; ZERO BIAS;

CURRENT DENSITY; DIODES; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POLARIZATION; TUNNEL DIODES;

TUNNEL JUNCTIONS;

EID: 78649253653 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517481 Document Type: Article

Times cited : (153)

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