Accurate mobility and carrier concentration analysis for GaN

Solid State Communications

Volumn 102, Issue 4, 1997, Pages 297-300

  Look, D C ^a   Sizelove, J R ^b   Keller, S ^c   Wu, Y F ^c   Mishra, U K ^c   Denbaars, S P ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Semiconductors; A. Thin films; B. Epitoxy; D. Electron phonon interactions; D. Electronic transport

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; EXCITONS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

ELECTRON PHONON INTERACTIONS; EPITOXY; WURTZITE STRUCTURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031123813     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00784-3     Document Type: Article

References (23)

1. Mohammad, S.N., Salvador, A.A. and Morkoc, H., Proc. IEEE, 83, 1995, 1306 (and references therein).
2. Sakai, H., Koide, T., Suzuki, H., Yamaguchi, M., Yamasaki, S., Koike, M., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., 34, 1995, L1429 (and references therein).
3. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Appl. Phys. Lett., 67, 1995, 1868 (and references therein).
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys., 35, 1996, L74.
5. Razeghi, M. and Rogalski, A., J. Appl. Phys., 79, 1996, 7433 (and references therein).
6. Khan, M.A., Shur, M.S., Kuznia, J.N., Chen, Q., Burm, J. and Schaff, W., Appl. Phys. Lett., 66, 1995, 1083.
7. Gaskill, D.K., Wickenden, A.E., Doverspike, K., Tadayon, B. and Rowland, L.R., J. Electronic Mater., 24, 1995, 1525.
8. Götz, W., Johnson, N.M., Chen, C., Liu, H., Kuo, C. and Imler, W., Appl. Phys. Lett., 68, 1996, 3144.
9. Rode, D.L., Semiconductors and Semimetals, 10, 1975, 1.
10. Nag, B.R., Electron Transport in Compound Semiconductors, Springer, Berlin, 1980.
11. Look, D.C., Electrical Characterization of GaAs Materials and Devices, p. 116ff. Wiley, New York, 1989.
12. Keller, S., Keller, B.P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J.S., Mishra, U.K. and DenBaars, S.P., Appl. Phys. Lett., 68, 1996, 1525.
13. Nakamura, S., Mukai, T. and Senoh, M., J. Appl. Phys., 71, 1992, 5543.
14. Look, D.C., Lorance, D.K., Sizelove, J.R., Stutz, C.E., Evans, K.R. and Whitson, D.W., J. Appl. Phys., 71, 1992, 260.
15. Shan, W., Schmidt, T., Yang, X.H., Song, J.J. and Goldenberg, B., J. Appl. Phys., 79, 1996, 3691.
16. Schroeder, D.K., Semiconductor Material and Device Characterization, Wiley, New York, 1990.
17. Lin, M.E., Sverdlov, B.N., Strite, S., Morkoç, H. and Drakin, A.E., Electronics Lett., 29, 1993, 1759.
18. Wang, Y.J., Kaplan, R., Ng, H.K., Doverspike, K., Gaskill, D.K., Ikedo, T., Amano, H. and Akasaki, I., J. Appl. Phys., 79, 1996, 8007.
19. Bykhovski, A.D., Kaminski, V.V., Shur, M.S., Chen, Q.C. and Khan, M.A., Appl. Phys. Lett., 68, 1996, 818.
20. Perlin, P., Litwin-Staszewska, E., Suchanek, B., Knap, W., Camassel, J., Suski, T., Piotrzkowski, R., Grzegory, I., Porowski, S., Kaminska, E. and Chervin, J.C., Appl. Phys. Lett., 68, 1996, 1114.
21. Dagys, A. and Kundrotas, J., Handbook on Physical Properties of Ge, Si, GaAs, and InP, Science and Encyclopedia Pub., Vilnius, Lithuania, 1994.
22. Meyer, B.K., Volm, D., Graber, A., Alt, H.C., Detchprohm, T., Amano, A. and Akasaki, I., Solid State Commun., 95, 1995, 597.
23. Chin, V.W.L., Tansley, T.L. and Osotchan, T., J. Appl. Phys., 75, 1994, 7365.