Structural and optical properties of nonpolar AlN(112̄20) films grown on ZnO(112̄20) substrates with a room-temperature GaN buffer layer

Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 1, 2010, Pages 0602131-0602133

  Ueno, Kohei ^a   Kobayashi, Atsushi ^a   Ohta, Jitsuo ^a   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALN; ALN FILMS; BAND EDGE; BASAL PLANE STACKING FAULTS; CATHODE LUMINESCENCE; GAN BUFFER LAYERS; LOW TEMPERATURE GROWTH; NON-POLAR; ROOM TEMPERATURE; STRUCTURAL AND OPTICAL PROPERTIES; ULTRAVIOLET LIGHT-EMITTING DEVICES; X RAY ROCKING CURVE; ZNO; ZNO SUBSTRATE;

BUFFER LAYERS; EPITAXIAL FILMS; EPITAXIAL LAYERS; GALLIUM NITRIDE; LATTICE MISMATCH; LUMINESCENCE; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; PULSED LASERS; SINGLE CRYSTALS; SUBSTRATES; ULTRAVIOLET RADIATION; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77955331044     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.060213     Document Type: Article

References (22)

1. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki: Jpn. J. Appl. Phys. 36 (1997) L382.
2. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog: Nature (London) 406 (2000) 865.
3. Y. Taniyasu, M. Kasu, and T. Makimoto: Nature (London) 441 (2006) 325.
4. E. Silveira, J. A. Freitas, Jr., M. Kneissl, D. W. Treat, N. M. Johnson, G. A. Slack, and L. J. Schowalter: Appl. Phys. Lett. 84 (2004) 3501.
5. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, P. Carrier, and S.-H. Wei: Appl. Phys. Lett. 83 (2003) 5163.
6. G. A. Slack, R. A. Tanzilli, R. O. Pohl, and J. W. Vandersande: J. Phys. Chem. Solids 48 (1987) 641.
7. N. Okada, N. Kato, T. Sumii, N. Fujimoto, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amino, I. Akasaki, T. Takagi, T. Noro, and A. Bandoh: J. Cryst. Growth 300 (2007) 141.
8. T. Akasaka, Y. Kobayashi, and T. Makimoto: Appl. Phys. Lett. 90 (2007) 121919.
9. M. Horita, J. Suda, and T. Kimoto: Appl. Phys. Lett. 89 (2006) 112117.
10. R. Armitage, J. Suda, and T. Kimoto: Appl. Phys. Lett. 88 (2006) 011908.
11. N. Onojima, J. Suda, and H. Matsunami: Jpn. J. Appl. Phys. 41 (2002) L1348.
12. D. M. Schaadt, O. Brandt, A. Trampert, H.-P. Schönherr, and K. H. Ploog: J. Cryst. Growth 300 (2007) 127.
13. E. Ohshima, H. Ogino, I. Niikura, K. Maeda, M. Sato, M. Igo, and T. Fukudad: J. Cryst. Growth 260 (2004) 166.
14. E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, and I. Brener: MRS Internet J. Nitride Semicond. Res. 1 (1996) 16.
15. J. Ohta, H. Fujioka, S. Ito, and M. Oshima: Appl. Phys. Lett. 81 (2002) 2373.
16. A. Kobayashi, S. Kawano, K. Ueno, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, and H. Horie: Appl. Phys. Lett. 91 (2007) 191905.
17. K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka: Jpn. J. Appl. Phys. 45 (2006) L1139.
18. K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka: Appl. Phys. Lett. 90 (2007) 141908.
19. L. Névot and P. Croce: Rev. Phys. Appl. 15 (1980) 761.
20. L. G. Parratt: Phys. Rev. 95 (1954) 359.
21. M. B. Mclaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck: Jpn. J. Appl. Phys. 47 (2008) 5429.
22. M. A. Moram and M. E. Vickers: Rep. Prog. Phys. 72 (2009) 036502.