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Volumn 92, Issue 20, 2008, Pages

Line defects of M -plane GaN grown on γ-LiAl O2 by plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY;

EID: 44349131508     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2924288     Document Type: Article
Times cited : (16)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.