Theory of the GaN crystal diode: Negative mass negative differential resistance

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Ridley, B K ^a   Schaff, W J ^b   Eastman, L F ^b  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCH FREQUENCY; FINITE ENERGY; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); NEGATIVE EFFECTIVE MASS;

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM COMPOUNDS; SIGNAL PROCESSING;

SEMICONDUCTOR DIODES;

EID: 18844381139     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1889235     Document Type: Article

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