N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Verma, Jai ^a   Simon, John ^a   Protasenko, Vladimir ^a   Kosel, Thomas ^a   Grace Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; ALGAN LAYERS; CARRIER INJECTION; ELECTRON BLOCKING LAYER; III-NITRIDE; LIGHT EXTRACTION; P-TYPE DOPING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLAR CRYSTALS; QUANTUM WELL; ULTRAVIOLET LIGHT-EMITTING DIODES;

CRYSTALS; DIODES; ELECTRIC FIELDS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; POLARIZATION; ULTRAVIOLET RADIATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80555154356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656707     Document Type: Article

References (20)

1. S. Nakamura, M. Senoh, and T. Mukai, Appl. Phys. Lett. 62, 2390 (1993). 10.1063/1.109374
2. T. Nishida and N. Kobayashi, Phys. Stat. Sol. (a) 176, 45 (1999). 10.1002/(SICI)1521-396X(199911)176:11.0.CO;2-M
3. F. Bernardini and V. Fiorentini, Phys. Stat. Sol. (a) 190, 65 (2002). 10.1002/1521-396X(200203)190:11.0.CO;2-Q
4. J. Piprek, Nitride Semiconductor Devices Principles and Simulation (Wiley-VCH Verlag, Weinheim, 2007), Chap..
5. C. Wood and D. Jena, Polarization Effects in Semiconductors: Ab Initio Theory to Device Applications (Springer, Berlin, 2007), Chap..
6. J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay, and D. Jena, Phys. Rev. Lett. 103, 026801 (2009). 10.1103/PhysRevLett.103.026801
7. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
8. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 87, 3375 (2000). 10.1063/1.372353
9. S. Rajan, M. Wong, Y. Fu, F. Wu, J. S. Speck, and U. K. Mishra, Jpn. J. Appl. Phys. 44, L1478 (2005). 10.1143/JJAP.44.L1478 (Pubitemid 43185028)
10. S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, Appl. Phys. Lett. 97, 203502 (2010). 10.1063/1.3517481
11. Z. Q. Li, M. Lestrade, Y. G. Xiao, and S. Li, Phys. Stat. Sol. (a) 208, 928 (2011). 10.1002/pssa.201026489
12. F. Akyol, D. N. Nath, E. Gur, P. S. Park, and S. Rajan, Jpn. J. Appl. Phys. 50, 052101 (2011). 10.1143/JJAP.50.052101
13. P. Kozodoy, H. Xing, S. P. DenBaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, J. Appl. Phys. 87, 1832 (2000). 10.1063/1.372098
14. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006). 10.1038/nature04760 (Pubitemid 44050193)
15. Y. Liao, C. Thomidis, C. Kao, and T. D. Moustakas, Appl. Phys. Lett. 98, 081110 (2011). 10.1063/1.3559842
16. J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, Science 1, 60 (2010). 10.1126/science.1183226
17. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, Appl. Phys. Lett. 97, 261103 (2010). 10.1063/1.3531753
18. K. Xu and A. Yoshikawa, Appl. Phys. Lett. 83, 251 (2003). 10.1063/1.1592309
19. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. Denbaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004). 10.1063/1.1645992
20. Y. Gao, M. D. Craven, J. S. Speck, S. P. Denbaars, and E. L. Hu, Appl. Phys. Lett. 84, 3322 (2004). 10.1063/1.1719281