GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3194-3196

  Chen, C Q ^a   Gaevski, M E ^a   Sun, W H ^a   Kuokstis, E ^a   Zhang, J P ^a   Fareed, R S Q ^a   Wang, H M ^a   Yang, J W ^a   Simin, G ^a   Khan, M A ^a   Maruska, Herbert Paul ^b   Hill, David W ^b   Chou, Mitch M C ^b   Chai, Bruce ^b  

^a University of South Carolina   (United States)

^b Crystal Photonics Inc Sanford   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; GAN EPILAYERS; GAN GROWTH; GAN SUBSTRATE; GROWTH CONDITIONS; HIGH INTENSITY; HIGH QUALITY; HOMOEPITAXIAL; HOMOEPITAXY; M-PLANE; ROOM TEMPERATURE; SPONTANEOUS POLARIZATIONS; V/III MOLAR RATIO;

CRYSTAL ORIENTATION; ELECTRIC FIELDS; EPILAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY;

GALLIUM NITRIDE;

EID: 79956008048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516230     Document Type: Article

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