The structure and electrical properties of HfTaON high-k films prepared by DIBSD

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 2953-2958

  Yu, Tao ^a   Jin, Chenggang ^a   Yang, Xumin ^a   Dong, Yaojun ^a   Zhang, Haiyan ^a   Zhuge, Lanjian ^a   Wu, Xumei ^a,b   Wu, Zhaofeng ^c  

^a SOOCHOW UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c YANCHENG INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Crystallization temperature; Electrical characteristic; FTIR; HfTaON; TEM; XPS

Indexed keywords

ANNEALING; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM OXIDES; HIGH-K DIELECTRIC; ION BEAMS; LOW-K DIELECTRIC; SILICA; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING PROCEDURES; ANNEALING TEMPERATURES; CRYSTALLIZATION TEMPERATURE; DUAL ION BEAM SPUTTERING; ELECTRICAL CHARACTERISTIC; FTIR; HFTAON; MONOCLINIC STRUCTURES;

TANTALUM COMPOUNDS;

EID: 84855565890     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.11.015     Document Type: Article

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