Characterization of HfTaO films for gate oxide and metal-ferroelectric- insulator-silicon device applications

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Lu, Xu Bing ^a   Maruyama, Kenji ^b   Ishiwara, Hiroshi ^a  

^a Tokyo Institute of Technology ^*  (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; HAFNIUM COMPOUNDS; OXIDE FILMS; SEMICONDUCTOR MATERIALS; THICKNESS MEASUREMENT;

GATE OXIDES; GATE STRUCTURES; METAL FERROELECTRIC INSULATOR SILICON DEVICES;

THIN FILMS;

EID: 40149094475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2871772     Document Type: Article

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