Annealing effects of HfO 2 gate thin films formed by inductively coupled sputtering technique at room temperature

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Choi, Won Joon ^a   Lee, Eun Joung ^a   Yoon, Kap Soo ^a   Yang, Jung Yup ^a   Lee, Jong Hyun ^a   Kim, Chae Ok ^a   Hong, Jin Pyo ^a   Kang, Hee Jae ^b  

^a Hanyang University   (South Korea)

^b Chungbuk National University   (South Korea)

Author keywords

Gate dielectric; Gate oxide; HfO 2; High k; MOS; MOSFET

Indexed keywords

EID: 12744251570     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (15)

1. D. C. Gilmer, R. Hegde, R. Garcia and V. Dhandapani, Appl. Phys. Lett. 81, 1288 (2002).
2. Y. Hoshino, K. Yamamoto, S. Hayashi and Y. Kido, Appl. Phys. Lett. 81, 2650 (2002).
3. Kazuhiko Yamamoto, Shigenori Hayashi and Masaaki Niwa, Appl. Phys. Lett. 81, 2053 (2002).
4. P. D. Kirsh, C. S. Kang, J. Lozano and J. C. Lee, J. Appl. Phys. 91, 4353 (2002).
5. Byoung Hun Lee, Laegu Kang, Renee Nieh and Jack C. Lee, Appl. Phys. Lett. 76, 1926 (2000).
6. Y. S. Lin, R. Puthenkovilakam and J. P. Chang, Appl. Phys. Lett. 81, 2041 (2002).
7. Hyeoksu Kang and Yonghan Roh, J. Vac. Sci. Technol. B 20, (2002).
8. Chae Ok Kim, Kap Soo Yoon, Jung Yup Yang and Jin Pyo Hong, J. Korean Phys. Soc. 41, 110 (2002).
9. K. S. Yoon, J. Y. Yang, W. J. Choi and J. P. Hong, J. Korean Phys. Soc. 42, S195 (2003).
10. M. Y. Ho, G. D. Wilk, P. M. Voyles and H. Gong, Appl. Phys. Lett. 81, 4218 (2002).
11. H. Y. Yu, N. Wu and M. F. Li, Appl. Phys. Lett. 81, 3618 (2002).
12. O. Renault, D. Samour, J.-F. Damlencourt and D. Blin Appl. Phys. Lett. 81, 3627 (2002).
13. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
14. G. D. Wilk and R. M. Wallace, J. Appl. Phys. 87, 484 (2000).
15. P. D. Kirsh, C. S. Kang, J. Lozano, J. C. Lee and J. G. Ekerdt, J. Appl. Phys. 91, 4353 (2002).