Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Lai, Chao Sung ^a   Wu, Woei Cherng ^b   Chao, Tien Sheng ^b   Chen, Jian Hao ^b   Wang, Jer Chyi ^c   Tay, Li Lin ^d   Rowell, Nelson ^d  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NANYA TECHNOLOGY CORPORATION   (Taiwan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); PLASMA APPLICATIONS; SPUTTERING;

GATE DIELECTRICS; INTERFACIAL LAYERS; OXIDE THICKNESS; PLASMA TREATMENT;

HAFNIUM COMPOUNDS;

EID: 33747485266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337002     Document Type: Article

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