High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Sreenivasan, Raghavasimhan ^a   Sugawara, Takuya ^a   Saraswat, Krishna C ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRODES; ELECTRON DIFFRACTION; HIGH TEMPERATURE APPLICATIONS; NITRIDATION; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION PHOTOELECTRON SPECTROSCOPY; REACTIVE SPECIES; REMOTE PLASMA SYSTEM;

TANTALUM COMPOUNDS;

EID: 33947131864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2643085     Document Type: Article

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